Abstract: The sample temperature (copper), ICCD delay influence on laser induced Cu plasma characteristics were studied. Through the wavelength of 532nm emitting laser focus on the copper, using the optical receiver accept atoms and ions in the plasma emission spectrum, then the spectrum and the signal to noise ratio were obtained. The results are shown as follows: Considering the local heat balance condition and the stronger spectral line and signal-to-noise ratio, from 110ns to 500ns, the optimal gate width is 500ns; from 200ns to 600ns, the optimal delay is 600ns; Copper temperature from room temperature to 110益, the higher the temperature of the copper, the better the signal-to-noise ratio, so that 110益is the optimal parameters. Lorentz fitting and gaussian fitting were used to obtain the intensity I value of the spectral line and the half-height and full width (FWHM) of the selected spectral line, so as to calculate the electron temperature and electron density of the Cu plasma corresponding to the selected experimental parameters, and then obtain the evolution trend diagram of the electron temperature and electron density with the sample temperature and delay. The copper temperature from 20益to 110益, the electron temperature from 4752K to 7231K;the delay ranges from 200ns to 800ns, and the electron temperature drops from 14230K to 1160K. During the experiment, a spectral line with a wavelength of 465.2nm of Cu was selected, and the electron collision coefficient of the spectral line was consulted to calculate the value of electron density. Then the copper temperature from 20 to 110, the electron density rose from 2.041 cm-3 to 2.732 cm-3;When the delay of ICCD between 200ns and 800ns,the electron density decreased from 3.51 cm-3 to 2.149 cm-3.

Key words: Laser induced Cu plasma, Electronic temperature, Electron density, The sample temperature